1SS250(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA SC59
$0.10
Available to order
Reference Price (USD)
3,000+
$0.09360
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1SS250(TE85L,F)
$0.10
Product details
General specs
- Product Status: Not For New Designs
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- Operating Temperature - Junction: 125°C (Max)
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