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XK1R9F10QB,LXGQ

Toshiba Semiconductor and Storage
XK1R9F10QB,LXGQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 160A TO220SM
$4.08
Available to order
Reference Price (USD)
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$4.08000
500+
$4.0392
1000+
$3.9984
1500+
$3.9576
2000+
$3.9168
2500+
$3.876
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XK1R9F10QB,LXGQ

XK1R9F10QB,LXGQ

$4.08

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.92mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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