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SI8409DB-T1-E1

Vishay Siliconix
SI8409DB-T1-E1 Preview
Vishay Siliconix
MOSFET P-CH 30V 4.6A 4MICROFOOT
$1.16
Available to order
Reference Price (USD)
3,000+
$0.49280
6,000+
$0.46816
15,000+
$0.45056
Exquisite packaging
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Vishay Siliconix SI8409DB-T1-E1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SI8409DB-T1-E1

SI8409DB-T1-E1

$1.16

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.47W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-XFBGA, CSPBGA

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