TTA008B,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER TRANSISTOR TO-126 PC=
$0.41
Available to order
Reference Price (USD)
1+
$0.40896
500+
$0.4048704
1000+
$0.4007808
1500+
$0.3966912
2000+
$0.3926016
2500+
$0.388512
Exquisite packaging
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TTA008B,Q
$0.41
Product details
The TTA008B,Q by Toshiba Semiconductor and Storage sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The TTA008B,Q commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Toshiba Semiconductor and Storage's commitment to innovation is evident in the TTA008B,Q's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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