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2N2907AUBP/TR

Microchip Technology
2N2907AUBP/TR Preview
Microchip Technology
SMALL-SIGNAL BJT
$15.62
Available to order
Reference Price (USD)
1+
$15.61500
500+
$15.45885
1000+
$15.3027
1500+
$15.14655
2000+
$14.9904
2500+
$14.83425
Exquisite packaging
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Microchip Technology 2N2907AUBP/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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2N2907AUBP/TR

2N2907AUBP/TR

$15.62

Product details

Experience superior semiconductor performance with the 2N2907AUBP/TR, a high-efficiency Bipolar Junction Transistor from Microchip Technology. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The 2N2907AUBP/TR demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Microchip Technology produces the 2N2907AUBP/TR using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the 2N2907AUBP/TR stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB

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