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TPH7R506NH,L1Q

Toshiba Semiconductor and Storage
TPH7R506NH,L1Q Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 22A 8SOP
$1.54
Available to order
Reference Price (USD)
5,000+
$0.59500
Exquisite packaging
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TPH7R506NH,L1Q

TPH7R506NH,L1Q

$1.54

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN

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