BUK9514-55A,127
NXP USA Inc.
NXP USA Inc.
PFET, 73A I(D), 55V, 0.015OHM, 1
$0.40
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BUK9514-55A,127
$0.40
Product details
Enhance your electronic designs with the BUK9514-55A,127 single MOSFET transistor from NXP USA Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The BUK9514-55A,127 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the BUK9514-55A,127 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the BUK9514-55A,127 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 3307 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 149W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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