TPH1R712MD,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 60A 8SOP
$1.42
Available to order
Reference Price (USD)
5,000+
$0.54600
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TPH1R712MD,L1Q
$1.42
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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