630A
Goford Semiconductor
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,
$0.87
Available to order
Reference Price (USD)
1+
$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
Exquisite packaging
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630A
$0.87
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 11A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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