TK3R2E06PL,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$1.67
Available to order
Reference Price (USD)
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$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
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TK3R2E06PL,S1X
$1.67
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 168W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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