PSMN102-200Y,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 200V 21.5A LFPAK56
$1.62
Available to order
Reference Price (USD)
1,500+
$0.64301
3,000+
$0.60014
7,500+
$0.57013
10,500+
$0.54870
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Nexperia USA Inc. PSMN102-200Y,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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PSMN102-200Y,115
$1.62
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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