SSM6N16FUTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.1A US6
$0.52
Available to order
Reference Price (USD)
3,000+
$0.07600
6,000+
$0.06840
15,000+
$0.06080
30,000+
$0.05700
75,000+
$0.05320
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SSM6N16FUTE85LF
$0.52
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
- Power - Max: 200mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
