SH8K10SGZETB
Rohm Semiconductor
Rohm Semiconductor
SH8K10S IS A POWER MOSFET WITH L
$1.38
Available to order
Reference Price (USD)
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$1.38000
500+
$1.3662
1000+
$1.3524
1500+
$1.3386
2000+
$1.3248
2500+
$1.311
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SH8K10SGZETB
$1.38
Product details
The SH8K10SGZETB by Rohm Semiconductor is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the SH8K10SGZETB include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the SH8K10SGZETB. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.
General specs
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 8.5A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 5V, 17.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V, 830pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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