SSM6J507NU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 10A 6UDFNB
$0.48
Available to order
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$0.15500
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$0.14500
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$0.14000
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SSM6J507NU,LF
$0.48
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
- Vgs (Max): +20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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