SCTW100N65G2AG
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 100A HIP247
$39.56
Available to order
Reference Price (USD)
1+
$39.56000
500+
$39.1644
1000+
$38.7688
1500+
$38.3732
2000+
$37.9776
2500+
$37.582
Exquisite packaging
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SCTW100N65G2AG
$39.56
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
- FET Feature: -
- Power Dissipation (Max): 420W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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