SSM3J15FV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 100MA VESM
$0.25
Available to order
Reference Price (USD)
8,000+
$0.03400
16,000+
$0.02890
24,000+
$0.02720
56,000+
$0.02550
200,000+
$0.02380
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
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SSM3J15FV,L3F
$0.25
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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