TK11S10N1L,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 11A DPAK
$0.35
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$0.3426588
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$0.3391976
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$0.328814
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TK11S10N1L,LQ
$0.35
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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