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RN4991(T5L,F,T)

Toshiba Semiconductor and Storage
RN4991(T5L,F,T) Preview
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
$0.05
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Reference Price (USD)
3,000+
$0.05313
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Toshiba Semiconductor and Storage RN4991(T5L,F,T) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN4991(T5L,F,T)

RN4991(T5L,F,T)

$0.05

Product details

Enhance your electronic designs with the RN4991(T5L,F,T) from Toshiba Semiconductor and Storage, a premium pre-biased bipolar junction transistor (BJT) array. This product falls under the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The RN4991(T5L,F,T) is engineered to deliver superior performance in amplification and switching tasks, offering unmatched reliability and efficiency. Its pre-biased configuration simplifies circuit design, reducing the need for additional components. The transistor array features excellent thermal management, ensuring stable operation under varying conditions. Ideal for use in power management systems, audio amplifiers, and sensor interfaces, the RN4991(T5L,F,T) provides consistent results. Its high gain and low noise characteristics make it a preferred choice for sensitive applications. The RN4991(T5L,F,T) is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its durable design and long lifespan, this BJT array is a cost-effective solution for demanding environments. To learn more about how the RN4991(T5L,F,T) can benefit your project, contact us for a detailed quote and technical support.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6

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