RN4991FE,LXHF(CT
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
AUTO AEC-Q TR NPN + PNP Q1BSR=10
$0.39
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$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
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Product details
Upgrade your electronic projects with the RN4991FE,LXHF(CT from Toshiba Semiconductor and Storage, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The RN4991FE,LXHF(CT is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the RN4991FE,LXHF(CT provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the RN4991FE,LXHF(CT is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the RN4991FE,LXHF(CT and how it can benefit your designs, contact us for a detailed quote and expert advice.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6