RN4910(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Toshiba Semiconductor and Storage RN4910(T5L,F,T) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RN4910(T5L,F,T)
$0.00
Product details
The RN4910(T5L,F,T) by Toshiba Semiconductor and Storage is a state-of-the-art pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products line under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is crafted to meet the demands of advanced electronic applications, offering high efficiency and dependability. The RN4910(T5L,F,T) features integrated pre-biasing, which optimizes circuit design and reduces component count. Its superior thermal performance ensures reliable operation in varying conditions. This BJT array is perfect for applications like motor drives, LED lighting, and power management. The RN4910(T5L,F,T) is also widely used in renewable energy solutions, industrial controls, and communication devices. With its high gain and low saturation voltage, it is ideal for precision applications. The compact and rugged design of the RN4910(T5L,F,T) makes it suitable for both commercial and industrial use. Engineers seeking a high-performance transistor array will find the RN4910(T5L,F,T) to be an excellent solution. Submit your inquiry today to receive detailed information on pricing and availability tailored to your needs.
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Viewed products
