DDC122TH-7
Diodes Incorporated
         
                
                                Diodes Incorporated                            
                        
                                TRANS 2NPN PREBIAS 0.15W SOT563                            
                        $0.00
                            
                                
                                Available to order
                            
                        Reference Price (USD)
3,000+
                                            $0.10408
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Diodes Incorporated DDC122TH-7 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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                            Product details
Enhance your electronic designs with the DDC122TH-7 from Diodes Incorporated, a top-grade pre-biased bipolar junction transistor (BJT) array. This product is part of the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The DDC122TH-7 is designed to deliver exceptional performance in amplification and switching applications, offering high reliability and efficiency. Its pre-biased configuration simplifies circuit design and enhances overall performance. The transistor array features excellent thermal management, ensuring stable operation in various environments. Perfect for power management systems, audio amplifiers, and sensor interfaces, the DDC122TH-7 provides consistent and accurate results. It is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its high gain and low power consumption, the DDC122TH-7 is ideal for energy-efficient applications. The durable and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about how the DDC122TH-7 can benefit your project, contact us for a detailed quote and expert technical support.
                General specs
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 220Ohms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 200MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563

 
                         
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    