RN2309(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A USM
$0.27
Available to order
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RN2309(TE85L,F)
$0.27
Product details
Precision-engineered for signal integrity, Toshiba Semiconductor and Storage's RN2309(TE85L,F) pre-biased BJT offers predictable gain characteristics critical for feedback systems. The transistor's monolithic construction ensures perfect resistor matching, eliminating thermal drift issues in differential amplifiers. Target applications include industrial process control instrumentation, laboratory equipment signal paths, and avionics data acquisition modules. Its gold-bonded leads provide corrosion resistance in high-humidity environments, while the halogen-free mold compound meets ecological directives. The device supports high-frequency operation up to VHF ranges when properly impedance-matched. Access reference designs incorporating RN2309(TE85L,F) by submitting a project brief through our engineering collaboration portal.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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