BCR196WH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 250MW SOT323-3
$0.04
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Reference Price (USD)
39,000+
$0.02957
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BCR196WH6327XTSA1
$0.04
Product details
Precision-engineered for signal integrity, Infineon Technologies's BCR196WH6327XTSA1 pre-biased BJT offers predictable gain characteristics critical for feedback systems. The transistor's monolithic construction ensures perfect resistor matching, eliminating thermal drift issues in differential amplifiers. Target applications include industrial process control instrumentation, laboratory equipment signal paths, and avionics data acquisition modules. Its gold-bonded leads provide corrosion resistance in high-humidity environments, while the halogen-free mold compound meets ecological directives. The device supports high-frequency operation up to VHF ranges when properly impedance-matched. Access reference designs incorporating BCR196WH6327XTSA1 by submitting a project brief through our engineering collaboration portal.
General specs
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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