RN2101MFV,L3XHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
$0.35
Available to order
Reference Price (USD)
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$0.3465
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$0.343
1500+
$0.3395
2000+
$0.336
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$0.3325
Exquisite packaging
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RN2101MFV,L3XHF(CT
$0.35
Product details
Toshiba Semiconductor and Storage's RN2101MFV,L3XHF(CT redefines reliability in pre-biased bipolar transistors, featuring a monolithic design that combines transistor and bias resistors. The device demonstrates exceptional linearity for analog circuits while maintaining low harmonic distortion. Its ESD protection and moisture-resistant packaging ensure longevity in harsh environments. Primary applications encompass smart home controllers, HVAC system interfaces, and robotics motor drivers. The transistor's fast switching capability suits pulse-width modulation (PWM) designs, whereas its stable DC gain benefits sensor signal chains. For engineers seeking drop-in replacements for discrete solutions, the RN2101MFV,L3XHF(CT offers immediate performance upgrades. Contact our sales team for application notes and sample requests.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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