HN1C01FE-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 50V 0.15A ES6
$0.05
Available to order
Reference Price (USD)
4,000+
$0.06510
Exquisite packaging
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HN1C01FE-GR,LF
$0.05
Product details
Discover the engineering excellence of Toshiba Semiconductor and Storage's HN1C01FE-GR,LF, a premier Bipolar Junction Transistor (BJT) Array in the Discrete Semiconductor Products category. This advanced component integrates multiple transistors with matched characteristics for precision circuit applications. The HN1C01FE-GR,LF offers outstanding current handling capacity with excellent thermal properties. Its design ensures parameter consistency across all transistors in the array. The product features low saturation voltage for enhanced energy efficiency in operation. With its high-frequency response, it suits demanding switching applications. The HN1C01FE-GR,LF maintains stable performance across wide temperature ranges. Its compact form factor supports space-constrained design requirements. Audio amplification systems benefit from its low distortion characteristics. Power supply circuits utilize its reliable switching performance. Sensor interface electronics employ its precise current amplification. The HN1C01FE-GR,LF also serves critical functions in automotive control modules. Toshiba Semiconductor and Storage has applied rigorous testing procedures to guarantee product reliability. The component's construction allows for effective thermal management in operation. Its design complies with international standards for quality and safety. Engineers value its consistent performance in both prototype and production environments. The HN1C01FE-GR,LF represents a versatile solution for diverse electronic applications. To learn more about this high-performance BJT Array, submit your inquiry through our website today.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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