DMMT5551S-7-F
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 160V 0.2A SOT26
$0.43
Available to order
Reference Price (USD)
3,000+
$0.10450
6,000+
$0.09925
15,000+
$0.09138
30,000+
$0.08613
75,000+
$0.08000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated DMMT5551S-7-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DMMT5551S-7-F
$0.43
Product details
Diodes Incorporated's DMMT5551S-7-F represents a high-performance solution in Bipolar Junction Transistor (BJT) Arrays for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a compact package. The DMMT5551S-7-F delivers excellent current handling capacity with uniform performance across all elements. Its design emphasizes thermal stability and parameter consistency. The product features low noise operation for sensitive signal processing applications. With its high current gain, it ensures efficient circuit operation. The DMMT5551S-7-F demonstrates reliable switching characteristics for diverse electronic systems. Medical diagnostic equipment benefits from its precise signal amplification. Consumer electronics utilize its space-saving design for compact devices. Industrial control systems employ its robust performance in harsh environments. The DMMT5551S-7-F also serves critical functions in power distribution systems. Diodes Incorporated has implemented stringent quality control measures in production. The component's design facilitates optimal thermal management during operation. Its lead-free composition complies with global environmental regulations. Engineers value its consistent performance in both prototype and mass production scenarios. The DMMT5551S-7-F offers a reliable solution for demanding electronic applications. Its versatility makes it suitable for various circuit design requirements. Contact us today through our online portal to inquire about pricing and availability for your projects.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Viewed products
