HN1A01FE-Y,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A ES6
$0.06
Available to order
Reference Price (USD)
4,000+
$0.06300
8,000+
$0.05670
12,000+
$0.05040
28,000+
$0.04725
100,000+
$0.04200
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HN1A01FE-Y,LF
$0.06
Product details
Enhance your electronic designs with the HN1A01FE-Y,LF BJT Array from Toshiba Semiconductor and Storage, a top-tier solution in the Discrete Semiconductor Products range. This transistor array is engineered for applications requiring multiple bipolar transistors with matched characteristics. The HN1A01FE-Y,LF excels in providing uniform performance across all transistors, ensuring balanced operation in complex circuits. Its low leakage current and high gain make it ideal for precision tasks. The product's design focuses on minimizing power consumption while maximizing output efficiency. With superior thermal management, it operates reliably under continuous load. The HN1A01FE-Y,LF is perfect for creating compact, high-density circuit layouts. Engineers appreciate its consistent parameters across production batches for design stability. This BJT Array finds applications in medical instrumentation for accurate signal processing. Telecommunications equipment utilizes its fast switching for clear signal transmission. Renewable energy systems employ it for efficient power conversion processes. For robotics and automation, it offers precise control over motor functions. The HN1A01FE-Y,LF stands as a testament to Toshiba Semiconductor and Storage's commitment to quality semiconductor solutions. Its compatibility with surface-mount technology simplifies assembly processes. Choose this reliable component for projects demanding high performance and durability. Contact us through our online portal to request a quote for the HN1A01FE-Y,LF and elevate your electronic designs.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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