HN1C03FU-A(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 20V 0.3A US6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.12647
6,000+
$0.11881
15,000+
$0.11114
30,000+
$0.10220
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
HN1C03FU-A(TE85L,F
$0.45
Product details
The HN1C03FU-A(TE85L,F from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision electronic applications. This product is part of the Discrete Semiconductor Products category, specifically optimized for circuits requiring multiple transistors in a compact package. Ideal for both industrial and commercial use, it ensures reliable performance and enhanced efficiency. The HN1C03FU-A(TE85L,F features excellent thermal stability and low noise operation, making it suitable for sensitive electronic environments. Its robust construction guarantees durability even in demanding conditions. With its advanced design, this BJT Array offers seamless integration into various circuit designs. Whether you're designing amplifiers, switches, or signal processors, the HN1C03FU-A(TE85L,F delivers consistent results. Its versatility extends to both analog and digital applications, providing flexibility for engineers. The product's compact form factor saves valuable board space without compromising performance. Trust Toshiba Semiconductor and Storage's expertise in semiconductor technology for your next project. Applications include audio amplification systems, power management modules, and sensor interfaces. For automotive electronics, it ensures reliable operation under varying temperatures. In consumer electronics, it enhances device performance and longevity. Industrial automation systems benefit from its high-speed switching capabilities. To get started with the HN1C03FU-A(TE85L,F, submit an online inquiry today for pricing and availability.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
- Power - Max: 200mW
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Viewed products
