SIGC109T120R3
Infineon Technologies
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
$10.06
Available to order
Reference Price (USD)
1+
$10.06000
500+
$9.9594
1000+
$9.8588
1500+
$9.7582
2000+
$9.6576
2500+
$9.557
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies SIGC109T120R3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIGC109T120R3
$10.06
Product details
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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