Shopping cart

Subtotal: $0.00

2SA1943-O(Q)

Toshiba Semiconductor and Storage
2SA1943-O(Q) Preview
Toshiba Semiconductor and Storage
TRANS PNP 230V 15A TO3P
$3.07
Available to order
Reference Price (USD)
1+
$3.23000
10+
$2.88800
25+
$2.59880
100+
$2.36780
300+
$2.13677
500+
$1.91730
1,000+
$1.61700
2,500+
$1.54000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Toshiba Semiconductor and Storage 2SA1943-O(Q) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2SA1943-O(Q)

2SA1943-O(Q)

$3.07

Product details

The 2SA1943-O(Q) by Toshiba Semiconductor and Storage sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The 2SA1943-O(Q) commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Toshiba Semiconductor and Storage's commitment to innovation is evident in the 2SA1943-O(Q)'s advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)

Viewed products

NXP Semiconductors

2PB709BSL,215

$0.00 (not set)
onsemi

2N5551TF

$0.00 (not set)
Nexperia USA Inc.

MJD2873-QJ

$0.00 (not set)
onsemi

2SB825R

$0.00 (not set)
Infineon Technologies

BC 860B E6327

$0.00 (not set)
Central Semiconductor Corp

2N4037 PBFREE

$0.00 (not set)
Infineon Technologies

BC848BE6433

$0.00 (not set)
STMicroelectronics

STB13005-1

$0.00 (not set)
Nexperia USA Inc.

2PB710ARL,215

$0.00 (not set)
Diodes Incorporated

ZX5T1951GTA

$0.00 (not set)
Top