2N5551TF
onsemi
onsemi
TRANS NPN 160V 0.6A TO92-3
$0.39
Available to order
Reference Price (USD)
2,000+
$0.04910
6,000+
$0.04292
10,000+
$0.03675
50,000+
$0.03263
100,000+
$0.02920
Exquisite packaging
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2N5551TF
$0.39
Product details
The 2N5551TF from onsemi is a premium-grade Bipolar Junction Transistor designed for demanding Discrete Semiconductor Products applications. This single BJT combines high current capability with fast switching characteristics for versatile circuit implementation. Its advanced epitaxial base structure ensures uniform current distribution and thermal management. The transistor exhibits low saturation voltage, reducing power dissipation in switching applications. Engineers value the 2N5551TF for its tight parameter tolerances and batch-to-batch consistency. Typical circuit implementations include class AB amplifiers, electronic switches, and voltage-controlled oscillators. Automotive electronics, power tools, and industrial control systems commonly utilize this reliable component. The 2N5551TF meets stringent quality standards with comprehensive production testing and failure analysis. Its moisture sensitivity level (MSL) rating accommodates standard manufacturing processes. onsemi supports the 2N5551TF with detailed application notes and SPICE models for design simulation. For volume pricing, lead time information, or technical consultation, please submit your inquiry through our responsive online system.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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