Shopping cart

Subtotal: $0.00

2SA1313-O(TE85L,F)

Toshiba Semiconductor and Storage
2SA1313-O(TE85L,F) Preview
Toshiba Semiconductor and Storage
TRANS PNP 50V 0.5A SMINI
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06038
6,000+
$0.05250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Toshiba Semiconductor and Storage 2SA1313-O(TE85L,F) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2SA1313-O(TE85L,F)

2SA1313-O(TE85L,F)

$0.06

Product details

Discover the 2SA1313-O(TE85L,F), a high-efficiency Bipolar Junction Transistor from Toshiba Semiconductor and Storage designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The 2SA1313-O(TE85L,F) demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the 2SA1313-O(TE85L,F) simplifies circuit design challenges. Toshiba Semiconductor and Storage's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini

Viewed products

onsemi

NZT902

$0.00 (not set)
Diodes Incorporated

ZTX603STZ

$0.00 (not set)
Taiwan Semiconductor Corporation

BC847BW RFG

$0.00 (not set)
Rectron USA

CMBT2907A-T

$0.00 (not set)
onsemi

BC817-25LT3

$0.00 (not set)
NTE Electronics, Inc

NTE2342

$0.00 (not set)
onsemi

MSD602-RT1G

$0.00 (not set)
Microchip Technology

JAN2N3019

$0.00 (not set)
Central Semiconductor Corp

2N6433 PBFREE

$0.00 (not set)
Rohm Semiconductor

2SC4081U3T106Q

$0.00 (not set)
Top