NTE2342
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 80V 1A TO92
$3.74
Available to order
Reference Price (USD)
1+
$3.74000
500+
$3.7026
1000+
$3.6652
1500+
$3.6278
2000+
$3.5904
2500+
$3.553
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
NTE Electronics, Inc NTE2342 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NTE2342
$3.74
Product details
Experience superior semiconductor performance with the NTE2342, a high-efficiency Bipolar Junction Transistor from NTE Electronics, Inc. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The NTE2342 demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. NTE Electronics, Inc produces the NTE2342 using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the NTE2342 stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.
General specs
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
Viewed products
