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CSD23202W10T

Texas Instruments
CSD23202W10T Preview
Texas Instruments
MOSFET P-CH 12V 2.2A 4DSBGA
$1.05
Available to order
Reference Price (USD)
250+
$0.28092
500+
$0.23850
750+
$0.20671
1,250+
$0.18550
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CSD23202W10T

CSD23202W10T

$1.05

Product details

The CSD23202W10T from Texas Instruments is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the CSD23202W10T provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The CSD23202W10T finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the CSD23202W10T and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
  • Vgs (Max): -6V
  • Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 6 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DSBGA (1x1)
  • Package / Case: 4-UFBGA, DSBGA

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