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NTF3055L108T1G

onsemi
NTF3055L108T1G Preview
NTF3055L108T1G Preview
NTF3055L108T1G
NTF3055L108T1G
onsemi
MOSFET N-CH 60V 3A SOT223
$0.89
Available to order
Reference Price (USD)
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$0.8455
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onsemi NTF3055L108T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NTF3055L108T1G

NTF3055L108T1G

$0.89

Product details

Elevate your electronic designs with the NTF3055L108T1G single MOSFET transistor from onsemi, a premium offering in the Discrete Semiconductor Products market (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional power handling capabilities combined with efficient switching characteristics. The NTF3055L108T1G features advanced semiconductor architecture that ensures minimal energy loss and optimal thermal management. Its design incorporates protective features that enhance reliability in demanding operating conditions. The MOSFET demonstrates excellent performance in automotive electronics, particularly in engine control units, lighting systems, and battery management solutions. Industrial applications include motor drives, power tools, and factory automation equipment. For renewable energy systems, it's particularly effective in wind power converters and solar tracking mechanisms. The component also finds significant use in high-end computing applications and data storage systems. With its combination of power efficiency and robust construction, the NTF3055L108T1G provides design engineers with a versatile solution for various power management challenges. To discover how this MOSFET can benefit your specific application, we encourage you to submit an online inquiry. Our knowledgeable staff will provide detailed product information and purchasing options to meet your project requirements and timeline.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223 (TO-261)
  • Package / Case: TO-261-4, TO-261AA

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