CSD19537Q3
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 9.7A/50A 8VSON
$1.47
Available to order
Reference Price (USD)
2,500+
$0.50540
Exquisite packaging
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CSD19537Q3
$1.47
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (3.3x3.3)
- Package / Case: 8-PowerVDFN
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