NTB190N65S3HF
onsemi
onsemi
MOSFET N-CH 650V 20A D2PAK-3
$1.84
Available to order
Reference Price (USD)
1+
$1.84098
500+
$1.8225702
1000+
$1.8041604
1500+
$1.7857506
2000+
$1.7673408
2500+
$1.748931
Exquisite packaging
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NTB190N65S3HF
$1.84
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 162W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK-3 (TO-263-3)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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