TSM60NB260CI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 13A ITO220AB
$4.67
Available to order
Reference Price (USD)
1+
$2.69000
10+
$2.43200
100+
$1.95390
500+
$1.51970
1,000+
$1.25918
3,000+
$1.21576
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TSM60NB260CI C0G
$4.67
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 32.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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