SIHD3N50DT1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 3A DPAK
$0.39
Available to order
Reference Price (USD)
1+
$0.38610
500+
$0.382239
1000+
$0.378378
1500+
$0.374517
2000+
$0.370656
2500+
$0.366795
Exquisite packaging
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| EMS | 3-7 days |
Vishay Siliconix SIHD3N50DT1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIHD3N50DT1-GE3
$0.39
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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