TSM250N02DCQ RFG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET 2 N-CH 20V 5.8A 6TDFN
$1.06
Available to order
Reference Price (USD)
3,000+
$0.15562
6,000+
$0.14558
15,000+
$0.14056
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TSM250N02DCQ RFG
$1.06
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
- Power - Max: 620mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-TDFN (2x2)
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