CAB008M12GM3
Wolfspeed, Inc.
Wolfspeed, Inc.
1200V 2B HALF-BRIDGE
$247.08
Available to order
Reference Price (USD)
1+
$247.08000
500+
$244.6092
1000+
$242.1384
1500+
$239.6676
2000+
$237.1968
2500+
$234.726
Exquisite packaging
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| EMS | 3-7 days |
Wolfspeed, Inc. CAB008M12GM3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CAB008M12GM3
$247.08
Product details
Discover the CAB008M12GM3 from Wolfspeed, Inc., a high-efficiency MOSFET array in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is engineered for applications demanding high power density and reliability. Its advanced design ensures optimal performance in a wide range of electronic systems.\n\nThe CAB008M12GM3 features low on-resistance, fast switching characteristics, and excellent thermal stability. The array format simplifies circuit design by consolidating multiple FETs, reducing board space and improving system efficiency. With superior electrical performance, it meets the needs of high-performance applications.\n\nCommon uses include server power supplies, electric vehicle charging stations, and medical equipment. Server power supplies benefit from its high efficiency and reliability. EV charging stations utilize its robust performance for safe and fast charging. Medical equipment relies on its precision and durability for critical operations.\n\nGet started with the CAB008M12GM3 today. Request a quote to explore how this MOSFET array can meet your project requirements. Our support team is here to assist you every step of the way.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 46mA
- Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 13.6nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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