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TQM130NB06CR RLG

Taiwan Semiconductor Corporation
TQM130NB06CR RLG Preview
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 10A/50A 8PDFNU
$3.05
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TQM130NB06CR RLG

TQM130NB06CR RLG

$3.05

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 8-PDFNU (5x6)
  • Package / Case: 8-PowerTDFN

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