SD211DE TO-72 4L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
HIGH SPEED N-CHANNEL LATERAL DMO
$7.91
Available to order
Reference Price (USD)
1+
$7.91000
500+
$7.8309
1000+
$7.7518
1500+
$7.6727
2000+
$7.5936
2500+
$7.5145
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SD211DE TO-72 4L
$7.91
Product details
Optimize your power management solutions with the SD211DE TO-72 4L single MOSFET transistor from Linear Integrated Systems, Inc., a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The SD211DE TO-72 4L features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the SD211DE TO-72 4L provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 25V
- Rds On (Max) @ Id, Vgs: 45Ohm @ 1mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +25V, -300mV
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-72-4
- Package / Case: TO-206AF, TO-72-4 Metal Can
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