HERAF1004G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 10A 300V IT0-220A
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HERAF1004G
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Product details
The HERAF1004G single rectifier diode from Taiwan Semiconductor Corporation sets new standards for power handling and efficiency in discrete semiconductor components. This diode features an optimized balance between forward conduction characteristics and reverse blocking capability, making it ideal for various rectification applications. Its construction incorporates advanced materials for enhanced thermal performance and long service life. The HERAF1004G is particularly suited for power supply units, voltage multipliers, and protection circuits. Industrial applications benefit from its ability to operate reliably under fluctuating load conditions. Additional advantages include excellent surge current handling and stable performance across temperature variations. This diode finds extensive use in aerospace systems, marine electronics, and heavy machinery controls. With its combination of performance and reliability, the HERAF1004G is an excellent choice for critical electronic systems. Contact us today to learn more about this exceptional rectifier solution.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 300 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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