BAQ33-GS18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 30V 200MA SOD80
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BAQ33-GS18
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Product details
The BAQ33-GS18 single rectifier diode from Vishay General Semiconductor - Diodes Division sets new standards for power handling and efficiency in discrete semiconductor components. This diode features an optimized balance between forward conduction characteristics and reverse blocking capability, making it ideal for various rectification applications. Its construction incorporates advanced materials for enhanced thermal performance and long service life. The BAQ33-GS18 is particularly suited for power supply units, voltage multipliers, and protection circuits. Industrial applications benefit from its ability to operate reliably under fluctuating load conditions. Additional advantages include excellent surge current handling and stable performance across temperature variations. This diode finds extensive use in aerospace systems, marine electronics, and heavy machinery controls. With its combination of performance and reliability, the BAQ33-GS18 is an excellent choice for critical electronic systems. Contact us today to learn more about this exceptional rectifier solution.
General specs
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 nA @ 15 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80 MiniMELF
- Operating Temperature - Junction: -65°C ~ 175°C
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