TA9110K
Tagore Technology
Tagore Technology
PA RF GAN PWR 6W .03-4GHZ 32V
$23.98
Available to order
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$23.98000
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$23.7402
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$23.5004
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$23.2606
2000+
$23.0208
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$22.781
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TA9110K
$23.98
Product details
Discover the TA9110K RF MOSFET transistor from Tagore Technology, a high-efficiency solution for discrete semiconductor products. This transistor is optimized for RF applications, providing excellent amplification and signal integrity. Its advanced FET technology ensures low noise and high gain, essential for precision electronics. The TA9110K is designed to handle high power levels while maintaining thermal efficiency. With superior linearity and switching speed, it is ideal for high-frequency circuits. The transistor's robust construction ensures reliability in challenging environments. Its compact design allows for flexible integration into various electronic systems. The TA9110K is perfect for applications requiring stable and efficient RF performance. Key advantages include minimal signal loss, high impedance matching, and excellent thermal management. These features make it suitable for use in wireless base stations, satellite receivers, and defense communication systems. It is also well-suited for consumer electronics, automotive infotainment, and industrial control systems. The TA9110K delivers consistent performance across a wide range of frequencies. Tagore Technology has crafted this MOSFET to meet the highest industry benchmarks. For superior RF functionality, the TA9110K is an outstanding choice. Upgrade your electronic designs with this high-quality transistor. Request a quote or submit an inquiry online to get started. Trust the TA9110K from Tagore Technology for all your RF needs.
General specs
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 30MHz ~ 4GHz
- Gain: 17dB
- Voltage - Test: 32 V
- Current Rating (Amps): 500mA
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 6W
- Voltage - Rated: 120 V
- Package / Case: -
- Supplier Device Package: -
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