IGT2731M130
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, S-BAND
$650.62
Available to order
Reference Price (USD)
1+
$650.62400
500+
$644.11776
1000+
$637.61152
1500+
$631.10528
2000+
$624.59904
2500+
$618.0928
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IGT2731M130
$650.62
Product details
The IGT2731M130 by Integra Technologies Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The IGT2731M130 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the IGT2731M130 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The IGT2731M130 delivers precise and stable signal processing across all applications. Integra Technologies Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the IGT2731M130 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the IGT2731M130 from Integra Technologies Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: -
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- Noise Figure: -
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