STGYA50M120DF3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V,
$10.47
Available to order
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$10.47000
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$10.3653
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$10.2606
1500+
$10.1559
2000+
$10.0512
2500+
$9.9465
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STGYA50M120DF3
$10.47
Product details
Experience unparalleled power control with the STGYA50M120DF3 single IGBT transistor by STMicroelectronics. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The STGYA50M120DF3 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the STGYA50M120DF3 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 2mJ (on), 3.2mJ (off)
- Input Type: Standard
- Gate Charge: 194 nC
- Td (on/off) @ 25°C: 38ns/258ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 325 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: MAX247™
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