FGH60N60UFDTU
onsemi
onsemi
IGBT 600V 120A 298W TO247
$8.02
Available to order
Reference Price (USD)
1+
$6.64000
10+
$6.02600
450+
$4.81311
900+
$4.40882
1,350+
$3.86976
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FGH60N60UFDTU
$8.02
Product details
Experience unparalleled power control with the FGH60N60UFDTU single IGBT transistor by onsemi. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The FGH60N60UFDTU boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the FGH60N60UFDTU offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 298 W
- Switching Energy: 1.81mJ (on), 810µJ (off)
- Input Type: Standard
- Gate Charge: 188 nC
- Td (on/off) @ 25°C: 23ns/130ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 47 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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