STGYA120M65DF2AG
STMicroelectronics
STMicroelectronics
IGBT
$13.06
Available to order
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$11.98000
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$11.08300
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$9.50750
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$8.56250
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$7.95000
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STGYA120M65DF2AG
$13.06
Product details
Upgrade your power electronics with the STGYA120M65DF2AG single IGBT transistor from STMicroelectronics. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The STGYA120M65DF2AG features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the STGYA120M65DF2AG delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 120A
- Power - Max: 625 W
- Switching Energy: 1.8mJ (on), 4.41mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 66ns/185ns
- Test Condition: 400V, 120A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 202 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: MAX247™
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